to-220f plastic-encapsulate mosfets CJPF04N60A n-channel power mosfet general description this advanced high voltage mosfet is designed to stand high energy in the avalanche mode an d switch efficiently. this new high energy device also offers a drain-to-source diode fast recovery time. desighed for high voltage, high speed switching applications such as power supp lies, converters, power motor controls and bridge circuits. feature z high current rating z lower r ds(on) z lower capacitance z lower total gate charge z tighter v sd specifications z avalanche energy specified maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 600 gate-source voltage v gs 30 v continuous drain current i d 4.0 pulsed drain current i dm 16 a single pulsed avalanche energy (note1) e as 260 mj thermal resistance from junction to ambient r ja 62.5 /w operating and storage temperature range t j, t stg -55 ~+150 maximum lead temperure for soldering purposes , 1/8?from case for 5 seconds t l 260 to-220f 1. gate 2. drain 3. source 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a-3,mar,2013
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit off characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 600 drain-source diode forward voltage(note2) v sd v gs = 0v, i s =4.0a 1.5 v zero gate voltage drain current i dss v ds =600v, v gs =0v 25 a gate-body leakage current (note2) i gss v ds =0v, v gs = 30v 100 na on characteristics (note2) gate-threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-resistance r ds(on) v gs =10v, i d =2.0a 2.0 3.0 ? forward transconductance g fs v ds =50v, i d =2a 2.5 s dynamic characteristics (note 3) input capacitance c iss 760 output capacitance c oss 180 reverse transfer capacitance c rss v ds =25v,v gs =0v,f =1mhz 20 pf switching characteristics (note 3) total gate charge q g 5.0 10 gate-source charge q gs 2.7 gate-drain charge q gd v ds =480v,v gs =10v,i d =4.0a 2.0 nc turn-on delay time (note3) t d (on) 20 turn-on rise time (note3) t r 10 turn-off delay time (note3) t d(off) 40 turn-off fall time (note3) t f v dd =300v, v gs =10v, r g =9.1 ? , i d =4.0a 20 ns notes : 1. l= 3 0mh, i l =4 a, v dd = 100 v, v gs =10v,r g =25 ? ,starting t j =25 . 2. pulse test : pulse width 300s, duty cycle 2%. 3. these parameters have no way to verify. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a-3,mar,2013
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